KRF7338

SMD S MD Type HEXFET Power MOSFET KRF7338 IC IC Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 Junction-to-Drain Lead VGS TJ, TSTG R R JA JL Symbol VDS ID ID IDM N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 *4 P-Channel -12 -3.0 -2.5 -13 Unit V A @Ta= 25 @Ta= 70 *3 *3 PD W mV/ 8.0 V -55 to + 150 62.5 20 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%. *3 Surface mounted on 1 in square Cu board. *4 The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. www.kexin.com.cn 1 SMD Type KRF7338 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 4.5V, ID = 6.0A*1 VGS = 3.0V, ID = 2.0A*1 VGS = -4.5V, ID = -2.9A*1 VGS = -2.7V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =6V, ID = 6.0A*1 VDS = -6.0V, ID = -1.5A*1 VDS = 9.6V, VGS = 0V VDS = -9.6V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 55 VDS = -9.6V, VGS = 0V, TJ = 55 VGS = VGS = 12V 8V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -2.9A,VDS = -9.6V,VGS = -4.5V N-Channel VDD = 6V,ID = 1.0A,RG = 6.0 VGS = 4.5V P-Channel VDD = -28V,ID = -1.0A,RG = 6.0 VGS = -4.5V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 9.0V,f = 1.0MHz P-Channel VGS = 0V,VDS = -9.0V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 12 -12 Typ Max Unit V 0.01 -0.01 0.034 0.060 0.150 0.200 0.6 -0.40 9.2 3.5 20 -1.0 50 -25 100 100 8.6 6.6 1.9 1.3 3.9 1.6 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 1.5 -1.0 TJ V/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance VGS(th) gfs V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss nA N-Channel ID =6.0A,VDS = 6.0V,VGS =4.5V nC ns pF 2 www.kexin.com.cn SMD Type KRF7338 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IS = -2.9A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ=25 , IF=-2.9A,di/dt=-100A/ s*1 s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 51 37 43 20 Min Typ IC IC Max 6.3 -3.0 26 -13 1.3 -1.2 76 56 64 30 Unit A Body Diode) *2 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3