KRF7410

SMD S MD Type HEXFET Power MOSFET KRF7410 IC IC Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @Ta= 25 @Ta = 70 PD PD Rating -20 -16 -13 -65 2.5 1.6 20 8 -55 to + 150 50 Unit V A W W mW/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on 1 in square Cu board, t 10sec. www.kexin.com.cn 1 SMD Type KRF7410 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -16A*1 Min -12 Typ Max Unit V 0.006 7 9 13 -0.4 55 -1.0 -25 -100 100 91 18 25 13 12 271 20 18 407 300 -0.9 V/ Static Drain-to-Source On-Resistance RDS(on) VGS = -2.5V, ID = -13.6A*1 VGS = -1.8V, ID = -11.5A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -16A*1 VDS = -9.6V, VGS = 0V VDS = -9.6V, VGS = 0V, TJ = 70 V S A IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr VGS = -8V VGS = 8V ID = -16A VDS = -9.6V VGS = -4.5V,*1 VDD = -6V,VGS=-4.5V ID = -1.0A RG = 6 RD = 6 VGS = 0V VDS = -10V f = 1.0MHz *1 nA nC ns 200 8676 2344 1604 pF -2.5 A -65 TJ = 25 , IS = -2.5A, VGS = 0V*1 TJ = 25 , IF =-2.5A di/dt = 100A/ s*1 97 134 -1.2 145 201 V ns C Body Diode) *2 *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn