KRF7555

SMD S MD Type HEXFET Power MOSFET KRF7555 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*2 Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS EAS dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM @TA= 25 @TA= 70 PD Rating -20 -4.3 -3.4 -34 1.25 0.8 10 12 36 1.1 -55 to + 150 100 Unit A W W m W/ V Mj V/ns /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -2.0A, di/dt -140A/ s, VDD 10sec V(BR)DSS,TJ 150 www.kexin.com.cn 1 SMD Type KRF7555 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -1.6A, VGS = 0V*1 TJ = 25 , IF =-2.5A di/dt = -100A/ s*1 54 41 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -4.3A*1 VGS = -2.5V, ID = -3.4A*1 Min -20 Typ Max Unit V -0.005 0.055 0.105 -0.6 2.5 -1.0 -25 -100 100 10 2.1 2.5 10 46 60 64 1066 402 126 -1.3 15 3.1 3.7 -1.2 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -0.8A*1 VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125 V S A IGSS VGS = -12V VGS = 12V ID = -3.0A VDS = -10V VGS = -5.0V VDD = -10V ID = -2.0A RD = 5.0 Rg = 6.0 VGS = 0V VDS = -10V f = 1.0MHz nA nC ns pF A Body Diode) *2 -34 -1.2 82 61 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn