KRF7601

SMD S MD Type HEXFET Power MOSFET KRF7601 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching IC IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 3.8A, di/dt 96A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGS dv/dt TJ, TSTG R JA *1 Symbol ID ID IDM PD Rating 5.7 4.6 30 1.8 14 12 5 -55 to + 150 70 /W W W/ V V/ns A Unit *2 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7601 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300µs; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 3.8A, VGS = 0V*1 TJ = 25 , IF = 3.8A.VR=10V di/dt = 100A/ s*1 51 69 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 4.5V, ID = 3.8A*1 VGS = 2.7V, ID =1.9A*1 Min 20 Typ Max Unit V 0.024 0.035 0.050 0.70 6.1 1.0 25 -100 100 14 2.0 6.3 5.1 47 24 32 650 300 150 1.8 22 3.0 9.5 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 10V, ID = 1.9A*1 VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125 V S A IGSS VGS = 12V VGS = -12V ID = 3.8A VDS = 16V VGS = 4.5V,*1 VDD = 10V ID = 3.8A RG =6.2 RD = 2.6 VGS = 0V VDS = 15V ƒ= 1.0MHz nA nC ns pF A Body Diode) *2 30 1.2 77 100 V ns nC *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn