KRF7603

SMD S MD Type HEXFET Power MOSFET KRF7603 IC IC Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,TA = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 3.7A, di/dt 130A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGS dv/dt TJ, TSTG R JA *1 Symbol ID ID IDM PD Rating 5.6 4.5 30 1.8 14 20 5 -55 to + 150 70 /W W W/ V V/ns A Unit *2 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7603 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300µs; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 3.7A, VGS = 0V*1 TJ = 25 , IF = 3.7A.VR=10V di/dt = 100A/ s*1 53 87 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 10V, ID = 3.7A*1 VGS = 4.5V, ID =1.9A*1 Min 30 Typ Max Unit V 0.029 0.035 0.060 1.0 4.3 1.0 25 -100 100 18 2.4 5.6 5.7 28 18 12 520 200 80 1.8 27 3.6 8.4 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 10V, ID = 1.9A*1 VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125 V S A IGSS VGS = -20V VGS = 20V ID = 3.7A VDS = 24V VGS = 10V,*1 VDD = 15V ID = 3.7A RG =6.2 RD = 4.0 VGS = 0V VDS = 25V ƒ= 1.0MHz nA nC ns pF A Body Diode) *2 30 1.2 80 130 V ns nC *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn