KRF7606

SMD S MD Type HEXFET Power MOSFET KRF7606 IC IC Features Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp 10 S Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS VGSM dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM Rating -30 -3.6 -2.9 -29 1.8 1.1 14 20 30 -5.0 -55 to + 150 70 Unit V A @Ta= 25 @Ta= 70 PD W mW/ V V V/ns /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -2.4A, di/dt -130A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7606 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -2.4A, VGS = 0V*1 TJ = 25 , IF =-2.4A di/dt = -100A/ s*1 43 50 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -2.4A*1 VGS = -4.5V, ID = -1.2A*1 Min -30 Typ Max Unit V -0.024 0.075 0.130 -1.0 2.3 -1.0 -25 -100 100 20 2.1 7.6 13 20 43 39 520 300 140 -1.8 30 3.1 11 0.09 V/ m 0.15 V S A RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -1.2A*1 VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125 IGSS VGS = -20V VGS = 20V ID = -2.4A VDS = -24V VGS = -10V VDD = -10V ID = -2.4A RG = 6 RD=4.0 VGS = 0V VDS = -25V f = 1.0MHz nA nC ns pF A Body Diode) *2 -29 -1.2 64 76 V ns C *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn