KRF7703

SMD S MD Type HEXFET Power MOSFET KRF7703 IC IC TSSOP-8 Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @Ta= 25 @Ta = 70 PD PD Rating -40 -6.0 -4.7 -24 1.5 0.96 0.012 20 -55 to + 150 83 Unit V A W W W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on 1 in square Cu board www.kexin.com.cn 1 SMD Type KRF7703 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -1.5A, VGS = 0V*1 TJ = 25 , IF =-1.5A di/dt = -100A/ s*1 34 56 VGS = 0V VDS = -25V f = 1.0MHz Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -6.0A*1 VGS = -4.5V, ID = -4.8A*1 Min -40 Typ Max Unit V 0.030 28 V/ m 45 RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -6.0A*1 VDS = -32V, VGS = 0V VDS = -32V, VGS = 0V, TJ = 70 -1.0 10 -3.0 V S -15 -25 -100 100 41 16 16 43 405 155 77 5220 416 337 -1.5 62 25 24 A IGSS VGS = -20V VGS = 20V ID = -6.0A VDS = -20V VGS = -10V VDD = -20V,VGS=-10V ID = -1.0A RG = 6 nA nC ns pF A Body Diode) *2 -24 -1.2 51 84 V ns C *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn