KRF7805Z

SMD S MD Type HEXFET Power MOSFET KRF7805Z IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TA = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Drain-Source Voltage Operating Junction and Storage Temperature Range Junction-to-Ambient Junction-to-Drain Lead Single Pulse Avalanche Energy*3 Avalanche Current *2 *1 Pulse width 400 s; duty cycle 2%. VGS VDS TJ,TSTG R JA R JL Symbol ID ID IDM Rating 16 12 120 2.5 1.6 0.02 20 30 -55 to + 150 50 20 72 12 Unit A *1 *1 PD PD W W W/ V V /W /W mJ A EAS IAR *2 Repetitive rating; pulse width limited by max. junction temperature. *3 Starting TJ = 25 , L = 0.94mH,RG = 25 , IAS = 12A. www.kexin.com.cn 1 SMD Type KRF7805Z Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 400 s; duty cycle 2%. Body Diode) Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = 12A, VGS = 0V*1 TJ = 25 , IF = 12A.VDD=15V di/dt = 100A/ s*1 29 20 VDS = 16V, VGS = 0V VDD = 15V ID = 12A VGS=4.5V Clamped Inductive Load VGS = 0V VDS = 15V f= 1.0MHz ID = 12A,VDS = 15V,VGS = 4.5V,*1 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 10V, ID = 16A*1 VGS =4.5V, ID = 13A*1 Min 30 Typ Max Unit V 0.023 5.5 7.0 1.35 2.25 -4.7 44 V/ m V mV/ S 1.0 150 100 -100 A RDS(on) VGS(th) VDS = VGS, ID = 250 A VGS(th) gfs IDSS VDS = 15V, ID = 12A*1 VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125 IGSS VGS = 20V VGS = -20V 18 4.7 1.6 6.2 5.5 7.8 10 11 10 14 3.7 2080 480 220 3.1 A Body Diode) *2 120 1.0 440 30 V ns nC pF ns nC 64 nA 27 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn