KRF8910

SMD S MD Type HEXFET Power MOSFET KRF8910 IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Ta = 25 Continuous Drain Current,VGS @ 10V TC = 70 Pulsed Drain Current *1 Maximum Power Dissipation Ta = 25 Maximum Power Dissipation Ta = 70 Linear Derating Factor Operating Junction and Storage Temperature Range Junction-to-Drain Lead Maximum Junction-to-Ambient *2,3 Single Pulse Avalanche Energy *4 Avalanche Current *1 TJ,TSTG R JL Symbol VDS VGS ID ID IDM PD Rating 20 20 10 8.3 82 2 1.3 0.016 -55 to + 150 20 62.5 19 8.2 Unit V A W /W /W mJ A R JA EAS IAR *1 Repetitive rating; pulse width limited by max. junction temperature. *2 when mounted on 1 inch square copper board. *3 R is measured at TJ of approxmately 90 *4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A. www.kexin.com.cn 1 SMD Type KRF8910 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 8.2A, VGS = 0V*1 TJ = 25 , IF =8.2A,VDD=10V di/dt = 100A/ s*1 17 6.5 VGS = 0V VDS = 10V f = 1.0MHz VDD = 10V, VGS = 4.5V,ID = 8.2A VDS = 10V, VGS = 0V ID = 8.2A,VGS = 4.5V,VDS = 10V Symbol BVDSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250A TJ ID = 1mA,Reference to 25 VGS = 10V, ID = 10A*1 VGS = 4.5V, ID = 8.0A*1 Min 20 Typ Max Unit V 0.015 10.7 14.6 1.65 13.4 18.3 2.55 -4.8 V/ RDS(on) VGS(th) V mV/ VDS = VGS, ID = 250 A VGS(th)/ IDSS TJ VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125 IGSS VGS = 20V VGS = -20V VDS = 10V, ID = 8.2A 24 7.4 2.4 0.80 2.5 1.7 3.3 4.4 6.2 10 9.7 4.1 960 300 160 2.5 A Body Diode) *2 82 1.0 26 9.7 V ns C pF ns nC 11 1.0 150 100 -100 S A nA *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn