KSA1201

S MD Type PNP Epitaxial Silicon Transistor KSA1201 Transistors Features Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1 to 2W : Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Rating -120 -120 -5 -800 -160 500 1,000 150 -55 to +150 Unit V V V mA mA mW mW Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Testconditons IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -120V, IE=0 VBE= -5V, IC=0 VCE= -5V, IC= -100mA IC= -500mA, IB=-50mA VCE= -5V, IC= -500mA VCE= -5V, IC= -100mA VCB= -10V, IE=0, f=1MHz 120 30 80 Min 120 -5 -100 -100 240 -1.0 -1.0 V V MHz pF Typ Max Unit V V nA nA hFE Classification Marking Rank Type SDO O 80 160 SDY Y 120 240 www.kexin.com.cn 1