KSC2881

S MD Type NPN Epitaxial Silicon Transistor KSC2881 Transistors Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature * Mounted on Ceramic Board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Rating 120 120 5 800 160 500 1,000 150 -55 to +150 Unit V V V mA mA mW mW Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Testconditons IC=10ìA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VBE=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz 120 30 80 Min 120 5 100 100 240 1.0 1.0 V V MHz pF Typ Max Unit V V nA nA hFE Classification Marking Rank Type SCO O 80 160 SCY Y 120 240 www.kexin.com.cn 1