KSP230

S MD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features Direct interface to C-MOS,TTL,etc High-speed switching 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 No secondary breakdown 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage (DC) Gate-source voltage (DC) open drain Drain current (DC) Peak drain current Total power dissipation * Storage temperature Operating junction temperature thermal resistance from junction to ambient * Symbol VDS VGSO ID IDM Ptot Tstg Tj Rth j-a Rating -300 20 -210 -0.75 1.5 -65 to +150 150 83.3 K/W Unit V V mA A W *Device mounted on an epoxy printed-circuit board, 40 X 40 X 1.5 mm; mounting pad for drain lead minimum 6 cm2. +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type KSP230 Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Gate-source threshold voltage Drain-source leakage current Gate leakage current Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time (See Fig.1and Fig.2) Turn-off time (See Fig.1and Fig.2) Symbol Testconditons Transistors Min -300 -1.7 Typ Max Unit V V(BR)DSS ID= -10 ìA, VGS = 0V VGSth IDSS IGSS RDS(on) yfs Ciss Coss Crss ton toff VGS = 0 V to -10 V,ID = -250 mA, VDD = -50 V, VGS = -10V to 0 V,ID = -250 mA, VDD = -50 V, VDS = -25 V, VGS = 0 V, f = 1 MHz VDS = VGS, ID= -1 mA VDS = -240 V, VGS = 0V VGS = 20V,VDS=0 -2.55 -100 100 17 V A nA ID = -170 mA, VGS = -10 V VDS = -25 V , ID = -170 mA 100 60 15 5 5 15 mS 90 30 15 10 ns 30 pF Fig.1Switching time test circuit. Fig.2 Input and output waveforms. 2 www.kexin.com.cn