KSS138

S MD Type Power MOSFET 200 mA, 50 V KSS138 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features N-Channel SOT-23 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 Gate 2 Source 3 Drain +0.1 0.38-0.1 0-0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-to-source voltage Gate-to-source voltage - continuous Drain Current continuous @ TA = 25 pulsed drain current (tp Total power dissipation @ TA = 25 Operating and storage temperature range Thermal resistance,junction-to-ambient Maximum lead temperature for soldering purposes, for 10 seconds 10 ìs) Symbol VDSS VGS ID IDM PD TJ, Tstg RèJA TL Rating 50 20 200 800 225 -55 to 150 556 260 /W Unit V V mA mA mW www.kexin.com.cn 1 SMD Type KSS138 Electrical Characteristics Ta = 25 Parameter Drain-to-source breakdown voltage Zero gate voltage drain current Symbol Testconditons Transistors Min 50 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = 250 ìA IDSS IGSS VGS(th) rDS(on) gfs Ciss Coss Crss td(on) td(off) 2%. VDD = 30 V, ID = 0.2 A VDS = 25 V, VGS = 0, f = 1 MHz VDS = 25 V, VGS = 0 VDS = 50 V, VGS = 0 0.1 0.5 0.1 0.5 5.6 1.5 10 3.5 100 40 12 3.5 50 25 5 20 20 ìA ìA ìA V Ù Ù mmhos Gate-source leakage current Gate-source threshold voltage * Static drain-to-source on-rResistance * VGS = 20 V, VDS = 0 VDS = VGS, ID = 1.0 mA VGS = 2.75 V, ID < 200 mA, TA = -40 to +85 VGS = 5.0 V, ID = 200 mA Forward transconductance * Input capacitance Output capacitance Transfer capacitance Turn-on delay time Turn-off delay time * Pulse Width 300 ìs, Duty Cycle VDS = 25 V, ID = 200 mA, f = 1.0 kHz pF pF pF ns ns Marking Marking J1 2 www.kexin.com.cn