KSS84

SMD S MD Type Transistors IC P-Channel Enhancement Mode Field Effect Transistor KSS84 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version +0.1 0.38-0.1 +0.1 1.3-0.1 Low On-Resistance 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Drain-Gate Voltage RGS Gate-Source Voltage Drain Current * Total Power Dissipation * Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 20KÙ Continuous Continuous unless otherwise specified Symbol VDSS VDGR VGSS ID Pd RèJA Tj, TSTG Rating -50 -50 20 -130 300 417 -55 to +150 Unit V V V mA mW /W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage unless otherwise specified Symbol BVDSS Testconditons VGS = 0V, ID = -250ìA VDS = -50V, VGS = 0V, TJ = 25 Min -50 -15 -60 -100 10 -0.8 -2.0 10 0.05 45 VDS = -25V, VGS = 0V,f = 1.0MHz 25 12 VDD = -30V, ID = -0.27A, RGEN = 50Ù, VGS = -10V 10 18 Typ Max Unit V ìA ìA nA nA V Ù S pF pF pF ns ns Zero Gate Voltage Drain Current IDSS VDS = -50V, VGS = 0V, TJ = 125 VDS = -25V, VGS = 0V, TJ = 25 Gate-Body Leakage Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Marking Marking K84 www.kexin.com.cn 1