KSS87

SMD S MD Type N-Channel Enhancement Mode Vertical D-MOS Transistor KSS87 SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 Transistors IC Features Direct interface to C-MOS, TTL, etc. High-speed switching Unit: mm +0.1 1.50-0.1 +0.1 2.50-0.1 Low RDSon. 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 No secondary breakdown +0.1 3.00-0.1 0.40 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage (DC) gate-source voltage (DC) open drain drain current (DC) peak drain current total power dissipation Tamb storage temperature junction temperature thermal resistance from junction to ambient * 25 * Symbol VDS VGSO ID IDM Ptot Tstg Tj Rth j-a Rating 200 20 400 1.6 1 -55 to 150 150 125 K/W Unit V V mA A W * Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum10 X10 mm +0.1 -0.1 www.kexin.com.cn 1 SMD Type KSS87 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage drain-source on-state resistance transfer admittance input capacitance output capacitance reverse transfer capacitance Switching turn-on time (see Figs 1 and 2) Switching turn-off time (see Figs 1 and 2) Symbol V(BR)DSS IDSS IGSS VGSth RDSon | Yfs| Ciss Coss Crss ton toff ID = 250 Testconditons A; VGS = 0 Transistors IC Min 200 Typ Max Unit V VDS = 60 V; VGS = 0 VDS = 200 V; VGS = 0 VGS = 20 V; VDS = 0 0.8 1.6 140 750 100 20 10 6 49 0.1 200 60 100 2.8 3 nA A nA V ID = 1 mA; VGS = VDS ID = 400 mA; VGS = 10 V ID = 400 mA; VDS = 25 V VDS = 25 V; VGS = 0;f = 1 MHz VDS = 25 V; VGS = 0;f = 1 MHz VDS = 25 V; VGS = 0;f = 1 MHz ID = 250 mA; VDD = 50 V;VGS = 0 to 10 V ID = 250 mA; VDD = 50 V;VGS = 0 to 10 V mS 120 30 15 10 60 pF pF pF ns ns Fig.1 Switching times test circuit. Fig.2 Input and output waveforms. 2 www.kexin.com.cn