KST8050S

S MD Type NPN Transistors KST8050S SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Collector Current: IC=0.5A 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 0.5 0.3 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditons IC = 100 ìA , IE = 0 IC = 1mA , IB = 0 IE = 100 ìA , IC = 0 VCB = 40 V , IE = 0 VCE = 20 V , IB = 0 VEB = 5 V , IC = 0 VCE = 1 V , IC = 50 mA VCE = 1 V , IC = 500 mA IC = 500 mA , IB = 50 mA IC = 500 mA , IB = 50 mA VCE = 6 V , IC = 20 mA , f = 30 MHz 150 120 50 0.6 1.2 V V MHz Min 40 25 5 0.1 0.1 0.1 350 Typ Max Unit V V V A A A hFE Classification Marking Rank hFE L 120 200 J3Y H 200 350 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KST8050S Typical Characteristics Transistors Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base-Emitter Saturation Voltage Callector-Emitter Saturation Voltage Fig.4 Current Gain Bandwidth Product 2 www.kexin.com.cn