KST8550S

S MD Type PNP Transistors KST8550S SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Collector current: IC-=0.5A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -0.5 0.3 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE Testconditons IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA VCE(sat) IC=-500mA, IB=-50mA VBE(sat) IC=-500mA, IB=-50mA fT VCE= -6V, IC= -20mA,f=30MHz 150 120 50 -0.5 -1.2 V V MHz Min -40 -25 -5 -0.1 -0.1 -0.1 350 Typ Max Unit V V V A A A hFE Classification Marking Rank hFE L 120 200 2TY H 200 350 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type KST8550S Typical Characteristics Transistors Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Bacse-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Fig.4 Current Gain Bandwidth Product 2 www.kexin.com.cn