KST9012

S MD SMD Type PNP Transistor KST9012 SOT-23 IC Transistors Unit: mm Excellent hFE liearity +0.1 2.4-0.1 Collector Current :IC=-0.5A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current to Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -500 300 150 -55 to 150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector - base breakdown voltage Collector - emitter breakdown voltage Emitter - base breakdown voltage Collector cut - off current Collector cut - off current Emitter cut - off current DC current gain Collector - emitter saturation voltage Base - emitter voltage Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Cob fT Testconditons Ic= -100ìA, IE=0 IC= -1 mA , IB=0 IE= -100ìA, IC=0 VCB=- 40V, IE=0 VCB=-20V, IE=0 VEB=- 5V, IC=0 VCE=-1V, IC= -50mA IC= -500 mA, IB= -50mA IC= -500 mA, IB=- 50mA VCB=-10V,IE=0,f=1MHz VCE=-6V, IC=-20mA,f=30MHz 150 120 Min -40 -25 -5 -0.1 -0.1 -0.1 400 -0.6 -1.2 5 V V pF MHz Typ Max Unit V V V A A A hFE Classification Marking Rank hFE 120 L 200 200 2T1 H 350 300 J 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KST9012 Typical Characteristics IC Transistors Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base-Emitter Saturation Voltage Colletor- Emitter Saturation Voltage Fig.4 Current Gain Bandwidth Product 2 www.kexin.com.cn