KST9013

S MD SMD Type NPN Transistors KST9013 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 IC Transistors Unit: mm Features +0.1 2.4-0.1 Collector Current :IC=0.5A 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Excellent hFE linearity 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 500 300 150 -55 to 150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector - base breakdown voltage Collector - emitter breakdown voltage Emitter - base breakdown voltage Collector cut - off current Collector cut -off current Emitter cut - off current DC current gain Collector - emitter saturation voltage Base - emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditons Ic= 100 A Ic= 0.1mA IE=100 A IE=0 IB=0 IC=0 Min 40 25 5 0.1 0.1 0.1 120 40 0.6 1.2 150 V V MHz 400 Typ Max Unit V V V A A A VCB=40 V , IE=0 VCE=20V , IB=0 VEB= 5V , IC=0 VCE=1V, IC= 50mA VCE=1V, IC=500mA IC=500 mA, IB= 50mA IC=500 mA, IB= 50mA VCE=6V, IC= 20mA,f=30MHz hFE Classification Marking Rank hFE L 120 to 200 J3 H 200 to 350 J 300 to 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KST9013 Typical Characteristics IC Transistors Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Fig.4 Current Gain Bandwidth Product 2 www.kexin.com.cn