KST9014

S MD Type NPN Transistors KST9014 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Excellent hFE linearity Collector Current :IC=0.1A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 45 5 0.1 0.2 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons Ic=100uA, IE=0 Ic=1mA, IB=0 IE=100 A, IC=0 Min 50 45 5 0.1 0.1 200 1000 0.5 1 150 V V MHz Typ Max Unit V V V A A VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA VCE(sat) IC=100mA, IB=10mA VBE(sat) IC=100mA, IB=10mA fT VCE=5V, IC=10mA,f=30MHZ hFE Classification Marking Rank hFE L 200 to 450 J6 H 450 to 1000 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1 SMD Type KST9014 Typical Characteristics Transistors Diodes Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base-Emitter Saturation Voltage Collector- Emitter Saturation Voltage Fig. 4 Current Gain Bandwidth Product 2 www.kexin.com.cn