KST9015

S MD Type PNP Transistors KST9015 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Complementary to KST9014 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -50 -45 -5 -0.1 0.2 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons Ic=-100uA, IE=0 Ic=-1mA, IB=0 IE=-100ìA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA 200 Min -50 -45 -5 -0.1 -0.1 1000 -0.3 -1 150 V V MHz Typ Max Unit V V V A A VCE(sat) IC=-100mA, IB=-10mA VBE(sat) IC=-100mA, IB=-10mA fT VCE=-5V, IC=-10mA,f=30MHZ hFE Classification Marking Rank hFE L 200 to 450 M6 H 450 to 1000 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1 SMD Type KST9015 Typical Characteristics Transistors Diodes 2 www.kexin.com.cn