KTA1660

S MD Type Epitaxial Planar PNP Transistor KTA1660 Transistors Features High Voltage: VCEO=-150V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Colletor-Base Voltage Colletor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colletor Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm2X0.8t) Symbol VCBO VCEO VEBO IC IB PC PC* Tj Tstg Rating -150 -150 -5 -50 -10 500 1 150 -55 to 150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Colletor Output Capacitance Symbol ICBO IEBO hFE VCE(sat) VBE fT Cob Testconditons VCB=-150V,IE=0 VCE=-5V,IC=0 VCE=-5V,IC=-10mA IC=-10mA,IB=-1mA VCE=-5V,IC=-30mA VCE=-30V,IC=-10mA VCB=-10V,IE=0,f=1MHz 120 4.0 5.0 70 Min Typ Max -0.1 -0.1 240 -0.8 -0.9 V V MHz pF Unit ìA ìA hFE Classification Marking Rank Type BO O 70 140 BY Y 120 240 www.kexin.com.cn 1