KTA1661

S MD Type Epitaxial Planar PNP Transistor KTA1661 Transistors Features High Voltage: VCEO=-120V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Colletor-Base Voltage Colletor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colletor Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm X0.8t) 2 Symbol VCBO VCEO VEBO IC IB PC PC* Tj Tstg Rating -120 -120 -5 -800 -160 500 1 150 -55 to 150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Colletor Output Capacitance Symbol ICBO IEBO V(BR)CEO B(BR)EBO hFE VCE(sat) VBE fT Cob Testconditons VCB=-120V,IE=0 VCE=5V,IC=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCE=-5V,IC=-100mA IC=-500mA,IB=-50mA VCE=-5V,IC=-500mA VCE=-5V,IC=-100mA VCB=-10V,IE=0,f=1MHz 120 30 -120 -5.0 80 240 -1.0 -1.0 V V MHz pF Min Typ Max -100 -100 Unit nA nA V V hFE Classification Marking Rank Type DO O 80 160 DY Y 120 240 www.kexin.com.cn 1