KTD1003

SMD S MD Type HEXFET Power MOSFET KRF7756 IC IC Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) TSSOP-8 Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @TA= 25 @TA = 70 PD PD Rating -12 -4.3 -3.5 -17 1.0 0.64 8 8 -55 to + 150 125 Unit V A W W m W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, 10sec www.kexin.com.cn 1 SMD Type KRF7756 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -4.3A*1 Min -12 Typ Max Unit V -0.006 0.040 0.058 0.087 -0.4 13 -1.0 -25 -100 100 12 1.8 2.9 12 18 160 170 1400 310 240 -1.0 18 2.7 4.4 -0.9 V/ Static Drain-to-Source On-Resistance RDS(on) VGS = -2.5V, ID = -3.4A*1 VGS = -1.8V, ID = -2.2A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -4.3A*1 VDS = -9.6V, VGS = 0V VDS = -9.6V, VGS = 0V, TJ = 70 V S A IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr VGS = -8.0V VGS = 8.0V ID = -4.3A VDS = -6.0V VGS = -4.5V VDD = -6V ID = -1.0A RD = 6 VGS = -4.5V VGS = 0V VDS = -10V f = 1.0MHz nA nC ns pF A Body Diode) *2 -17 TJ = 25 , IS = -1.0A, VGS = 0V*1 TJ = 25 , IF =-1.0A di/dt = -100A/ s*1 35 20 -1.2 53 30 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn