KTD2005

SMD S MD Type Ultrahigh-Speed Switching Applications KTD2005 IC IC TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current(pulse) *1 Allowable Power Dissipation *2 Total Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, duty cycle 1% Symbol VDSS VGSS ID IDP PD PT Tch Tstg Rating 20 10 1 4 0.8 1.0 150 -55 to +150 Unit V V A A W W *2 Mounted on a ceramic board (1000mm2X0.8mm) www.kexin.com.cn 1 SMD Type KTD2005 Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Testconditons Min 20 10 10 0.4 1.8 2.6 200 260 90 VDS =10 V,f = 1 MHz 60 28 10 See Specified Test Circuit 22 20 19 6 VDS=10V,VGS=10V,ID=1A 1 2 IS= 1A, VGS = 0 V 1.0 1.2 260 360 1.3 Typ Max IC IC Unit V A A V S m pF pF pF ns ns ns ns nC nC nC V V(BR)DSS ID=1mA, VGS=0 IDSS IGSS VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Yfs VDS = 10 V, ID = 1 A RDS(on)1 VGS = 10 V, ID = 1A RDS(on)2 VGS = 4 V, ID = 1A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Switching Time Test Circuit 2 www.kexin.com.cn