KTD2017

SMD S MD Type N-Channel Silicon MOSFET KTD2017 IC IC TSSOP-8 Features Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting. Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature (PW 10ìs) Symbol VDSS VGSS ID IDP PD PT Tch Tstg Rating 20 10 5 20 0.8 1.3 150 -55 to +150 Unit V V A A W W www.kexin.com.cn 1 SMD Type KTD2017 Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Static Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Symbol Testconditons Min 20 1 10 0.4 11.2 16 17 20 1500 350 230 19 See Specified Test Circuit 190 90 160 42 VDS= 10 V,VGS = 10 V,ID = 5 A 4 8 IF = 5 A, VGS = 0 V 0.8 1.2 23 29 1.3 Typ Max IC IC Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V V(BR)DSS ID=1mA, VGS=0 IDSS IGSS VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Yfs VDS = 10 V, ID = 5 A RDS(on)1 VGS = 4 V, ID = 4 A RDS(on)2 VGS = 2.5 V, ID = 2 A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS = 10 V,f = 1 MHz VDS = 10 V,f = 1 MHz VDS = 10 V,f = 1 MHz Switching Time Test Circuit 2 www.kexin.com.cn