KTS1012

SMD S MD Type Load Switching Applications KTS1012 IC IC TSSOP-8 Unit: mm Features Low ON resistance. 4.0V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current(pulse) *1 Allowable Power Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, duty cycle 1% Symbol VDSS VGSS ID IDP PD Tch Tstg Rating -30 20 -6 -32 1.3 150 -55 to +150 Unit V V A A W *2 Mounted on a ceramic board (1000mm2X0.8mm) www.kexin.com.cn 1 SMD Type KTS1012 Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Testconditons Min -30 -1 10 -2.4 8.7 12 21 33 37 1700 VDS = -10 V,f = 1 MHz 380 240 15 See Specified Test Circuit 130 110 85 VDS= -10 V VGS = -10 V ID = -6 A Is = -6 A, VGS = 0 V 32 4.5 5 -0.79 -1.5 28 47 52 Typ Max IC IC Unit V A A V S m m m pF pF pF ns ns ns ns nC nC nC V V(BR)DSS ID=-1mA, VGS=0 IDSS IGSS VDS = -30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS(off) VDS = -10 V, ID = -1 mA Yfs VDS = -10 V, ID = -6 A RDS(on)1 VGS = -10 V, ID = -6 A Drain to Source On-state Resistance RDS(on)2 VGS = -4.5 V, ID = -4 A RDS(on)3 VGS = -4 V, ID = -4 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source "Miller" Charge Gate-Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Switching Time Test Circuit Marking Marking S1012 2 www.kexin.com.cn