SMD S MD Type
Ultrahigh-Speed Switching Applications KTS2004
IC IC
TSSOP-8
Features
Low ON resistance. 4V drive. Mount height 1.1mm.
Unit: mm
1,5,8: Drain 2,3,6,7: Source 4: Gate
Absolute Maximum Ratings Ta = 25
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current(pulse) *1 Allowable Power Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, duty cycle 1% Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 30 20 4 25 1.3 150 -55 to +150 Unit V V A A W
*2 Mounted on a ceramic board (1000mm2X0.8mm)
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1
SMD Type
KTS2004
Electrical Characteristics Ta = 25
Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-Drain"Miller" Charge Diode Forward Voltage Symbol Testconditons Min 30 10 10 1.0 5 8 36 58 460 VDS = 10 V,f = 1 MHz 250 120 10 See Specified Test Circuit 90 70 75 VDS= 10 V VGS = 10 V ID = 4 A IS= 4 A, VGS = 0 V 15 3 4 0.85 1.2 46 78 2.4 Typ Max
IC IC
Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V
V(BR)DSS ID=1mA, VGS=0 IDSS IGSS VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V
VGS(off) VDS = 10 V, ID = 1 mA Yfs VDS = 10 V, ID = 4 A
RDS(on)1 VGS = 10 V, ID = 4A RDS(on)2 VGS = 4 V, ID = 4 A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
Switching Time Test Circuit
2
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