KTS3C3F30L

SMD S MD Type STripFET TM Power MOSFET KTS3C3F30L IC IC Features Typical RDS(on) (N-Channel)=50m Typical RDS(on) (N-Channel)=140m Standard outline for easy automated surface mount assembly Low threshold drive Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k Gate-to-Source Voltage Continuous Drain Current, at Tc = 25 Continuous Drain Current, at Tc = 100 Pulsed Drain Current Total Dissipation at TC = 25 Total Dissipation at TC = 25 Single Operation Dual Operation TJ, TSTG Rthj-amb * Tl ) Symbol VDS VDGR VGS ID ID IDM PTOT 3.5 2.2 14 1.6 2 -65 to 150 62.5 78 300 /W N-Channel 30 30 16 2.7 1.7 11 W A P-Channel Unit V V Junction and Storage Temperature Range Thermal Resistance Junction-ambient Max (Single Operating) (Dual Operating) Maximum Lead Temperature For Soldering Purpose * Mounted on 0.5 in pad of 2oz. copper. 2 www.kexin.com.cn 1 SMD Type KTS3C3F30L Electrical Characteristics Ta = 25 Parameter Drain-source Breakdown Voltage Symbol V(BR)DSS ID = 250 ID = 250 Testconditons A, VGS = 0 A, VGS = 0 N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current (VGS = 0) IDSS VDS = Max Rating VDS = Max Rating, TC = 125 P-Ch N-Ch P-Ch Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage IGSS VGS(th) VGS = 16V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDS = 25V, f = 1 MHz, VGS = 0 P-Channel VDS = 25V, f = 1 MHz, VGS = 0 N-Channel Turn-on Delay Time td(on) VDD=15V,ID=1.75A,RG=4.7 , VGS = 4.5V P-Channel VDD=15V,ID=1.5A,RG=4.7 , VGS=4.5V N-Channel VDD =24V, ID=3.5A,VGS = 4.5V P-Channel VDD = 24V, ID= 3A,VGS = 4.5V N-Channel Turn-off Delay Time td(off) VDD = 15V, ID = 1.75A,RG = 4.7 , VGS = 4.5V P-Channel Fall Time tf VDD = 15V, ID = 1.5A,RG = 4.7 , VGS = 4.5V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1 1 50 140 60 160 5.5 4 320 420 90 95 40 30 27 14.5 40 37 8.5 4.8 2 1.7 4 2 30 90 20 23 3.5 3 14 12 12 7 65 Min 30 30 1 1 10 10 Typ IC IC Max Unit V V A A A A A A V V m m m m S S pF pF pF pF pF pF ns ns ns ns nC nC nC nC nC nC ns ns ns ns A A A A 10 10 VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A VGS = 10V, ID = 1.75A VGS = 10V, ID = 1.5A VGS = 4.5V, ID = 1.75A VGS = 4.5V, ID = 1.5A VDS = 15 V ID= 1.75 A VDS = 15 V ID= 1.5 A Static Drain-source On Resistance RDS(on) 165 90 200 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Ciss Coss Crss Rise Time tr Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd Source-drain Current Source-drain Current (pulsed) *1 ISD ISDM 2 www.kexin.com.cn SMD Type KTS3C3F30L Electrical Characteristics Ta = 25 Parameter Forward On Voltage *2 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Curren *1 Pulsed: Pulse duration = 300 Symbol VSD trr Qrr IRRM s, duty cycle 1.5 %. Testconditons ISD = 3.5A, VGS = 0 ISD = 3A, VGS = 0 N-Channel ISD = 3.5A, di/dt = 100A/ VDD = 15V, Tj = 150 P-Channel ISD = 3A, di/dt = 100A/ VDD = 15V, Tj = 150 s, s, N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 28 35 18 25 1.3 1.5 Min Typ IC IC Max 1.2 1.2 Unit V V ns ns nC nC A A *2 Pulse width limited by safe operating area www.kexin.com.cn 3