KUK108-50DL

SMD S MD Type Transistors IC PowerMOS transistor Logic level TOPFET KUK108-50DL TO-263 Features + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature + .2 8 .7 -00.2 Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Lower operating input current permits direct drive by micro-controller ESD protection on input pin Overvoltage clamping for turn off of inductive loads +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous drain source voltage*1 Continuous input voltage Continuous drain current Continuous drain current Repetitive peak on-state drain current Total power dissipation Storage temperature Continuous junction temperature*2 Lead temperature Protection supply voltage*3 Protected drain source supply voltage Protected drain source supply voltage*4 Instantaneous overload dissipation Repetitive peak clamping current Non-repetitive clamping energy Repetitive clamping energy Electrostatic discharge capacitor voltage Symbol VDS VIS ID ID IDRM PD Tstg Tj Tsold VISP VDDP(T) VDDP(P) PDSM IDROM EDSM EDRM VC VIS = 5 V VIS = 5 V Tmb = 25 VIS = 0 V Tmb 25 ; IDM = 15 A;VDD ; IDM = 8 A;VDD 20 V; 20 V; f = Tmb Tmb Tmb Tmb 25 100 25 25 ; VIS = 5 V ; VIS = 5 V ; VIS = 5 V Condition Rating 50 6 13.5 8.5 54 40 -55 to +150 150 250 4 50 24 0.6 15 200 20 2 V V V kW A mJ mJ kV Unit V V A A A W 95 Tmb 250 Hz C = 250 pF; R = 1.5 kÙ 5 .6 0 11 Input Gate 22 Drain Drain 33 Source Source www.kexin.com.cn 1 SMD Type KUK108-50DL Absolute Maximum Ratings Ta = 25 Parameter Junction to mounting base Junction to ambient Continuous forward current Symbol Rth j-mb Rth j-a IS Tmb 25 ; VIS = 0 V Condition Transistors IC Rating 2.5 to3.1 50 15 Unit K/W K/W A *1Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. *2A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect . the switch *3The input voltage for which the overload protection circuits are functional. *4The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDDP(P) maximum. Electrical Characteristics Ta = 25 Parameter Drain-source clamping voltage Drain-source clamping voltage Zero input voltage drain current Zero input voltage drain current Zero input voltage drain current Drain-source on-state resistance*1 Overload threshold energy Response time Drain current*2 Peak drain current*3 Threshold junction temperature Forward transconductance Input threshold voltage Input supply current Symbol Testconditons Min 50 300 ms;d 0.01 0.5 1 10 0.01 85 0.2 0.8 25 60 150 300 ms;d 0.01 5 1.0 100 9 1.5 200 160 2.0 1.0 330 240 6 33 50 8 40 40 35 650 430 ìA ìA V kÙ kÙ ìs ìs ìs ìs 2.6 2.0 350 270 3.5 s V ìA ìA V 70 10 20 100 125 Typ Max Unit V V ìA ìA ìA mÙ J ms A A V(CL)DSS VIS = 0 V; ID = 10 mA V(CL)DSS VIS = 0 V; IDM = 1 A; tp IDSS IDSS IDSS RDS(ON) EDS(TO) td sc ID(SC) IDM(SC) Tj(TO) gfs VIS(TO) IIS VDS = 12 V; VIS = 0 V VDS = 50 V; VIS = 0 V VDS = 40 V; VIS = 0 V; Tj = 125 VIS = 5 V; IDM = 7.5 A; tp VDD = 13 V; VIS = 5 V;L VDD = 13 V; VIS = 5 V;L VDD = 13 V; VIS = 5 V;L VIS = 5 V; VDD = 13 V;L VIS = 5 V; from ID 300 ìs;ä 10 ìH; RL = 10 mÙ 10 ìH; RL = 10 mÙ 10 ìH; RL = 10 mÙ 10 ìH; RL = 10 mÙ 0.5 A*4 VDS = 10 V; IDM = 7.5 A tp VDS = 5 V; ID = 1 mA VIS = 5 V V=4V Protection reset voltage*5 VISR Tj = 25 T = 150 Input supply current Input breakdown voltage Input series resistance to gate of power MOSFET Turn-on delay time Rise time Turn-off delay time Fall time IISL V(BR)IS RIG VIS = 3.5 V VIS = 5 V II = 10 mA Tj = 25 Tj = 150 td on tr td off tf VDD = 13 V; VIS = 5 V RL = 4 Ù VDD = 13 V; VIS = 0 V RL = 4 Ù 2 www.kexin.com.cn SMD Type KUK108-50DL Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse recovery time Internal drain inductance Internal source inductance Symbol VSDO trr Ld Ls Testconditons IS = 15 A; VIS = 0 V; tp = 300 ms Min Transistors IC Typ 1.0 Max 1.5 Unit V 2.5 7.5 nH nH *1Continuous input voltage. The specified pulse width is for the drain current. *2Continuous drain-source supply voltage. Pulsed input voltage. *3Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd). *4The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. *5The input voltage below which the overload protection circuits will be reset. www.kexin.com.cn 3