KUK109-50DL

SMD S MD Type Transistors IC PowerMOS transistor Logic level TOPFET KUK109-50DL Features Vertical power DMOS output stage + .1 1 .2 7 -00.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Low on-state resistance Overload protection against over temperature Overload protection against short circuit load 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Lower operating input current permits direct drive by micro-controller ESD protection on input pin Overvoltage clamping for turn off of inductive loads +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Latched overload protectionreset by input + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous drain source voltage*2 Continuous input voltage Continuous drain current *1 Continuous drain current Tmb 100 ; VIS = 5 V Symbol VDS VIS ID ID IDRM PD Tstg Tj Tsold VISP VDDP(T) VDDP(P) Rating 50 0 to 6 26 16 100 75 -55 to 150 150 250 4 50 20 V V V Unit V V A A A W Repetitive peak on-state drain current *1 Total power dissipation Storage temperature Continuous junction temperature*3 Lead temperature Protection supply voltage*4 Protected drain source supply voltage VIS = 5 V Protected drain source supply voltage VIS = 5 V 5 .6 0 11 Input Gate 22 Drain Drain 33 Source Source www.kexin.com.cn 1 SMD Type KUK109-50DL Absolute Maximum Ratings Ta = 25 Parameter Instantaneous overload dissipation Tmb = 25 * 1Tmb 25 ; VIS = 5 V Symbol PDSM Rating 1.3 Unit kW Transistors IC *2 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. *3 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. *4 The input voltage for which the overload protection circuits are functional. Electrical Characteristics Ta = 25 Parameter Repetitive peak clamping current Non-repetitive clamping energy Repetitive clamping energy Electrostatic discharge capacitor voltage Drain-source clamping voltage Drain-source clamping voltage Zero input voltage drain current Zero input voltage drain current Zero input voltage drain current Drain-source on-state resistance*1 Overload threshold energy Response time Drain current*2 Peak drain current*3 Threshold junction temperature Forward transconductance Input threshold voltage Input supply current Symbol IDROM EDSM EDRM VC VIS = 0 V Tmb Tmb 25 ; IDM = 26 A;V 95 ; IDM = 8 A;VDD 20 V; 20 V; f = 250 Hz Testconditons Min Typ Max 26 625 40 2 50 300 ìs;d 0.01 0.5 1 10 0.01 45 0.4 0.8 45 105 150 300 ìs;d 0.01 10 1.0 VIS = 5 V VIS = 4 V Protection reset voltage*1 VISR protection latched; Tj = 25 T = 150 Input supply current Input breakdown voltage Input series resistance to gate of power MOSFET Turn-on delay time Rise time Turn-off delay time Fall time IISL V(BR)IS RIG td on tr td off tf VDD = 13 V; VIS = 5 V resistive loadg RL = 2.1Ù VDD = 13 V; VIS = 0 V resistive load RL = 2.1Ù VIS = 5 V VIS = 3.5 V II = 10 mA Tj = 25 Tj = 150 6 33 50 17 75 60 70 2.0 1.0 330 240 650 430 mA mA V kÙ kÙ ìs ìs ìs ìs 100 16 1.5 200 160 2.6 2.0 350 270 3.5 S V mA mA V 70 10 20 100 60 Unit A mJ mJ kV V V mA mA mA mW J ms A A Human body model;C = 250 pF; R = 1.5 kÙ V(CL)DSS VIS = 0 V; ID = 10 mA V(CL)DSS VIS = 0 V; IDM = 2 A; tp IDSS IDSS IDSS VDS = 12 V; VIS = 0 V VDS = 50 V; VIS = 0 V VDS = 40 V; VIS = 0 V; Tj = 125 300 ìs;d RDS(ON) VIS = 5 V; IDM = 13 A; tp EDS(TO) td sc ID(SC) IDM(SC) Tj(TO) gfs VIS(TO) IIS Tmb=25 ;L 10mH;RL=10mÙ;VDD=13V;VIS=5V Tmb=25 ;L 10mH;RL=10mÙ;VDD=13V;VIS=5V Tmb=25 ;L 10mH;RL=10mÙ;VDD=13V; VIS=5V Tmb=25 ;L 10mH;RL=10mÙ;VIS=5V;VDD=13V VIS = 5 V; from ID 1A VDS = 10 V; IDM = 13 A tp VDS = 5 V; ID = 1 mA normal operation; 2 www.kexin.com.cn SMD Type KUK109-50DL Electrical Characteristics Ta = 25 Parameter Continuous forward current Forward voltage Reverse recovery time Internal drain inductance Internal source inductance Symbol IS VSDO trr Ld Ls Tmb Testconditons 25 ; VIS = 0 V Min Transistors IC Typ Max 26 Unit A V IS = 26 A; VIS = 0 V; tp = 300 ìs not applicable Measured from upper edge of tab to centre of die Measured from source lead soldering point to source bond pad 1.0 1.5 2.5 7.5 nH nH *1 Continuous input voltage. The specified pulse width is for the drain current. *2 Continuous drain-source supply voltage. Pulsed input voltage. *3 Continuous input voltage. Momentary short circuit load connection. www.kexin.com.cn 3