KUK110-50GL

SMD S MD Type Transistors IC PowerMOS transistor Logic level TOPFET KUK110-50GL TO-263 Features Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Overload protection against short circuit load Latched overload protection reset by input 5 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous off-state drain source voltage1 VIS = 0 V Continuous input voltage Continuous drain current * Continuous drain current Tmb 100 ; VIS = 5 V Symbol VDSS VIS ID ID IDRM PD Tstg Tj Tsold VISP VDDP(T) VDDP(P) PDSM Rating 50 6 45 28 180 125 -55 to 150 150 250 4 50 24 2.1 V V V kW Unit V V A A A W Repetitive peak on-state drain current * Total power dissipation Tmb Storage temperature Continuous junction temperature2 Lead temperature Protection supply voltage3 for valid protection Protected drain source supply voltage VIS = 5 V Protected drain source supply voltage4 VIS = 5 V C Instantaneous overload dissipation Tmb = 25 ° * Tmb 25 ; VIS = 5 V 25 5 .6 0 11 Input Gate 22 Drain Drain 33 Source Source www.kexin.com.cn 1 SMD Type KUK110-50GL Electrical Characteristics Ta = 25 Parameter Repetitive peak clamping current Non-repetitive clamping energy Repetitive clamping energy Electrostatic discharge capacitor voltage Drain-source clamping voltage Drain-source clamping voltage Zero input voltage drain current Zero input voltage drain current Zero input voltage drain current Drain-source on-state resistance Overload threshold energy Response time Threshold junction temperature Input threshold voltage Input supply current Protection reset voltage Protection reset voltage Input supply current Input clamp voltage Input series resistance Forward transconductance Drain current1 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Continuous forward current Forward voltage Reverse recovery time Internal drain inductance Internal source inductance Junction to mounting base Junction to ambient Symbol IDROM EDSM EDRM VC VIS = 0 V Tmb Tmb 25 ; IDM = 25 A;V 85 ; IDM = 16 A;VDD 25 V; inductive load 20 V; f = 250 Hz Testconditons Transistors IC Min Typ Max 45 1 80 2 Unit A J mJ kV V Human body model;C = 250 pF; R = 1.5 kÙ 50 300ì s;ä 0.01 0.5 1 10 0.01 30 1.1 0.8 150 1.0 1.5 0.2 2.0 Tj = 150 VIS = 5 V; protection latched II = 10 mA to gate of power MOSFET VDS = 10 V; IDM = 25 A tp VDS = 13 V; VIS = 5 V VDD = 13 V; VIS = 5 V resistive load RL = 1.1Ù VDD = 13 V; VIS = 0 V resistive load RL = 1.1 Ù VDD = 13 V; VIS = 5 V inductive load IDM = 11 A VDD = 13 V; VIS = 0 V inductive load IDM = 11 A Tmb 25 ; VIS = 0 V 1.0 300 ìs;ä 0.01 17 1.0 2 6 1.5 28 60 2 8 8 8 3.7 3.7 13 1.4 3.8 2.6 V(CL)DSS VIS = 0 V; ID = 10 mA V(CL)DSS VIS = 0 V; IDM = 4 A; tp IDSS IDSS IDSS VDS = 12 V; VIS = 0 V VDS = 50 V; VIS = 0 V VDS = 40 V; VIS = 0 V; Tj = 125 300 ìs; ä 70 10 20 100 35 V ìA ìA ìA mÙ J ms RDS(ON) IDM = 25 A; VIS = 5 V;tp EDS(TO) td sc Tj(TO) VIS(TO) IIS VISR VISR IISL V(BR)IS RIG gfs ID(SC) td on tr td off tf td on tr td off tf IS VSDS trr Ld Ls Rth j-mb Rth j-a Tmb = 25 ; L Tmb = 25 ; L 10 mH;VDD = 13 V; VIS = 5 V 10 mH;VDD = 13 V; VIS = 5 V 2A VIS = 5 V; from ID VDS = 5 V; ID = 1 mA 2.0 0.35 3.5 V mA V VIS = 5 V; normal operation 10 mA V kÙ S A ìs 50 1.5 A V IS = 50 A; VIS = 0 V; tp = 300 ìs not applicable Measured from upper edge of tab to centre of die Measured from source lead soldering point to source bond pad 2.5 7.5 0.8 1.0 nH nH K/W K/W minimum footprint FR4 PCB 50 2 www.kexin.com.cn SMD Type KUK110-50GL Electrical Characteristics Ta = 25 Parameter Continuous forward current Forward voltage Reverse recovery time Internal drain inductance Internal source inductance Symbol IS VSDO trr Ld Ls Tmb Testconditons 25 ; VIS = 0 V Min Transistors IC Typ Max 26 Unit A V IS = 26 A; VIS = 0 V; tp = 300 ìs not applicable Measured from upper edge of tab to centre of die Measured from source lead soldering point to source bond pad 1.0 1.5 2.5 7.5 nH nH *1 Continuous input voltage. The specified pulse width is for the drain current. *2 Continuous drain-source supply voltage. Pulsed input voltage. *3 Continuous input voltage. Momentary short circuit load connection. www.kexin.com.cn 3