KUK7105-40AIE

SMD S MD Type TrenchPLUS standard level FET KUK7105-40AIE TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Integrated temperature sensor Electrostatic discharge protection Standard level compatible. + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Q101 compliant + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage RGS = 20 K Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V peak drain current *1 Total power dissipation Tmb = 25 gate-source clamping current (continuous) gate-source clamping current *3 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 ìs; 40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a Symbol VDS VDGS VGS ID ID IDM Ptot IGS(CL) Rating 40 40 20 155 75 620 272 10 50 -55 to 175 155 75 620 1.46 0.55 50 A A A J K/W K/W Unit V V V A A A W mA mA *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; = 0.01 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7105-40AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source breakdown voltage gate-source leakage current IDSS VDS = 40 V; VGS = 0 V;Tj = 25 VDS = 40 V; VGS = 0 V;Tj = 175 V(BR)GSS IG = IGSS VGS = VGS = drain-source on-state resistance RDSon 1 mA;-55 Tj 175 20 Min 40 36 2 1 Transistors IC Typ Max Unit V V 3 4 V V 4.4 0.1 10 250 22 22 1000 10 . 4.5 5 9.5 0.98 1.86 450 1.08 2.05 500 120 1.18 2.24 550 127 22 60 5000 1670 1100 V A A V nA A m m 10 V; VDS = 0 V;Tj = 25 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 VGS = 10 V; ID = 50 A;Tj = 175 drain-Isense on-state resistance ratio of drain current to sense current total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge RD(Is)on ID/Isense Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr VGS = 10 V; ID = 100 mA;Tj = 25 VGS = 10 V; ID = 100 mA;Tj = 175 VGS 10 V;-55 Tj 175 nC nC nC pF pF pF ns ns ns ns nH nH VGS = 10 V; VDD = 32 V;ID = 25 A 19 50 4300 VGS = 0 V; VDS = 25 V;f = 1 MHz 1400 820 35 VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù 115 155 110 measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad Is = 25A; VGS = 0 V IS = 20 A; dIF/dt = -100 A/ìs; VGS = -10 V; VDS = 30 V 2.5 7.5 0.85 96 224 1.2 V ns nC 2 www.kexin.com.cn