KUK7575-100A

SMD S MD Type TrenchMOSTM standard level FET KUK7575-100A TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features TrenchMOS TM technology Q101 compliant + .2 8 .7 -00.2 175 rated Standard level compatible. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage (DC) drain-gate voltage (DC) RGS = 20 kÙ gate-source voltage (DC) drain current (DC) Tmb = 25 ; VGS = 10 V drain current (DC) Tmb = 100 ; VGS = 10 V peak drain current *1 total power dissipation Tmb = 25 storage temperature operating junction temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *2 non-repetitive avalanche energy thermal resistance from junction to ambient thermal resistance from junction to mounting base *1 Tmb = 25 ; pulsed; tp 10 ìs; 100 V; VGS = 10 V; RGS = 50Ù,starting Tmb= 25 IDM Ptot Tstg Tj IDR IDRM W DSS Rth(j-a) Rth(j-mb) Symbol VDS VDGR VGS ID Rating 100 100 20 23 16.2 92 99 -55 to 175 -55 to 175 23 92 100 50 1.5 A A mJ K/W K/W Unit V V V A A A W *2 unclamped inductive load; ID = 14 A;VDS 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7575-100A Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 drain-source leakage current gate-source leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge IDSS IGSS RDSon Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr from drain lead 6 mm from package to centre of die VDD = 30 V; RL = 2.2Ù;VGS = 10 V; RG = 5.6Ù VGS = 0 V; VDS = 25 V;f = 1 MHz VDS = 100 V; VGS = 0 V;Tj = 25 VDS = 100 V; VGS = 0 V;Tj = 175 VGS = 20 V; VDS = 0 V Transistors IC Min 100 89 2 1 Typ Max Unit V V 3 4 V V 4.4 0.05 10 500 2 64 100 75 187 907 127 78 8 39 26 24 4.5 2.5 V mA mA nA m m pF pF pF ns ns ns ns nH nH nH VGS = 10 V; ID = 13 A;Tj = 25 VGS = 10 V; ID = 13 A;Tj = 175 from source lead to source bond pad IS = 25 A; VGS = 0 V; IS = 13 A;dIS/dt = -100 A/ìs VGS = -10 V; VDS = 30 V 7.5 0.85 64 120 1.2 V ns nC 2 www.kexin.com.cn