SMD S MD Type
250V N-Channel Enhancement Mode Vertical MOSFET KVN4424Z
SOT-89
Transistors IC
Unit: mm 1.50
+0.1 -0.1
Features
240 Volt BVDS Extremely low RDS(on)=4.3
4.50
+0.1 -0.1
+0.1 1.80-0.1
+0.1 2.50-0.1
Low threshold and Fast switching
1
+0.1 0.48-0.1
2
3
+0.1 0.80-0.1
+0.1 0.53-0.1 +0.1 0.44-0.1
+0.1 2.60-0.1
+0.1 4.00-0.1
+0.1 3.00-0.1
+0.1 0.40-0.1
1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current at Tamb=25 Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VDS ID IDM VGS Ptot Tj:Tstg Rating 240 300 1 40 1* -55 to +150 Unit V mA A V W
* recommended Ptot calculated using FR4 measuring 15X15X0.6mm Refer to the handling instructions for soldering surface mount components.
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1
SMD Type
KVN4424Z
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage On State Drain-Current Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance Forward Transconductance *1,2 Input Capacitance *2 Common Source Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-On Delay Time *2,3 Rise Time *2,3 Turn-Off Delay Time *2,3 Fall Time *2,3 gfs Ciss Coss Crss td(on) tr td(off) tf 2% VDD 50V, ID =0.25A, VGEN=10V VDS=25V, VGS=0V, f=1MHz RDS(on) Symbol BVDSS VGS(th) IGSS ID(on) IDSS Testconditons ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 40V, VDS=0V
Transistors IC
Min 240 0.8
Typ
Max
Unit V
1.3
1.8 100
V nA A
VDS=10V, VGS=10V VDS=240 V, VGS=0V VDS=190 V, VGS=0V, T=125 VGS=10V,ID=500mA VGS=2.5V,ID=100mA VDS=10V,ID=0.5A
0.8
1.4 10 100 4 4.3 5.5 6
A A
0.4
0.75 110 15 3.5 2.5 5 40 16 200 25 15 5 8 60 25
S pF pF pF ns ns ns ns
*1 Measured under pulsed conditions. Width=300 s. Duty cycle *2 Sample test. *3 Switching times measured with 50 source impedance and
5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
Marking
Marking N24
2
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