KVN4525E6

SMD S MD Type Transistors IC 250V N-Channel Enhancement Mode MOSFET KVN4525E6 Unit: mm Features High voltage Low on-resistance Fast switching speed Low gate drive Low threshold 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS=10V; TA=25 )*1 (VGS=10V; TA=70 )*1 Pulsed Drain Current *3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 Linear Derating Factor Operating and Storage Temperature Range Junction to Ambient*1 Junction to Ambient*2 Tj:Tstg R R JA JA Symbol VDSS VGS ID ID IDM IS ISM PD Rating 250 40 230 183 Unit V V mA mA A 1.1 1.44 1.1 8.8 -55 to +150 113 65 A A W mW/ *1 /W /W *1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions *2 For a device surface mounted on FR4 PCB measured at t 5 secs. *3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal www.kexin.com.cn 1 SMD Type KVN4525E6 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Symbol V(BR)DSS IDSS IGSS VGS(th) Testconditons ID=1mA, VGS=0V VDS=250V, VGS=0V VGS= 40V, VDS=0V ID=1mA, VDS= VGS VGS=10V, ID=500mA Static Drain-Source On-State Resistance *1 RDS(on) VGS=4.5V, ID=360mA VGS=2.4V, ID=20mA Forward Transconductance *3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge Diode Forward Voltage*! Reverse Recovery Time *3 Reverse Recovery Charge *3 gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Tj=25 , IS=360mA,VGS=0V Tj=25 , IF=360mA, di/dt= 100A/ 2% . s VDS=25V,VGS=10V,ID=360mA*2 VDD =30V, ID=360mA,RG=50 , Vqs=10V *2 VDS=25 V, VGS=0V,f=1MHz VDS=10V,ID=0.3A Transistors IC Min 250 Typ 285 35 1 Max Unit V 500 100 1.8 8.5 9.0 9.5 nA nA V 0.8 1.4 5.6 5.9 6.4 0.3 0.475 72 11 3.6 1.25 1.70 11.40 3.5 2.6 0.2 0.5 3.65 0.28 0.7 0.97 186 34 260 48 S pF pF pF ns ns ns ns nC nC nC V ns nC *! Measured under pulsed conditions. Width=300 s. Duty cycle *2 Switching characteristics are independent of operating junction temperature. *3 For design aid only, not subject to production testing. Marking Marking N52 2 www.kexin.com.cn