KVN4525Z

SMD S MD Type Transistors IC 250V N-Channel Enhancement Mode MOSFET KVN4525Z SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 Features High voltage Low on-resistance +0.1 1.80-0.1 +0.1 2.50-0.1 Fast switching speed Low gate drive Low threshold SOT89 package 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS=10V; TA=25 )*1 (VGS=10V; TA=70 )*1 Pulsed Drain Current *3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 Linear Derating Factor Operating and Storage Temperature Range Junction to Ambient *1 Junction to Ambient*2 Tj:Tstg R R JA JA Symbol VDSS VGS ID ID IDM IS ISM PD Rating 250 40 240 192 1.44 1.1 1.44 1.2 9.6 -55 to +150 103 50 Unit V V mA mA A A A W mW/ *1 /W /W *1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions *2 For a device surface mounted on FR4 PCB measured at t 5 secs. *3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. www.kexin.com.cn 1 SMD Type KVN4525Z Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Symbol V(BR)DSS IDSS IGSS VGS(th) Testconditons ID=1mA, VGS=0V VDS=250V, VGS=0V VGS= 40V, VDS=0V ID=1mA, VDS= VGS VGS=10V, ID=500mA Static Drain-Source On-State Resistance *1 RDS(on) VGS=4.5V, ID=360mA VGS=2.4V, ID=20mA Forward Transconductance *3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge Diode Forward Voltage *1 Reverse Recovery Time *3 Reverse Recovery Charge *3 gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Tj=25 , IS=360mA,VGS=0V Tj=25 , IF=360mA, di/dt=100A/ 2% . s VDS=25V,VGS=10V,ID=360mA *2,3 VDD =50V, ID=-200mA RG=6.0 , RD=4.4 *2,3 VDS=25 V, VGS=0V,f=1MHz VDS=10V,ID=0.3A 0.3 0.8 Min 250 Transistors IC Typ 285 35 1 1.4 5.6 5.9 6.4 475 72 11 3.6 1.25 1.70 11.40 3.5 2.6 0.2 0.5 Max Unit V 500 100 1.8 8.5 9.0 9.5 nA nA V ms pF pF pF ns ns ns ns 3.65 0.28 0.70 0.97 nC nC nC V ns nC 186 34 260 48 *1 Measured under pulsed conditions. Width=300 s. Duty cycle *2 Switching characteristics are independent of operating junction temperature. *3 For design aid only, not subject to production testing. Marking Marking N52 2 www.kexin.com.cn