KVP4424Z

SMD S MD Type 250V P-Channel Enhancement Mode Vertical MOSFET KVP4424Z Transistors IC Features 240 Volt VDS RDS(on)= 8.8 typical at VGS=-3.5V SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 1.50-0.1 Unit: mm +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 Low threshold and Fast switching +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current at Tamb=25 Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb =25 Operating and Storage Temperature Range Symbol VDS ID IDM VGS Ptot Tj:Tstg Rating -240 -200 -1 40 1* -55 to +150 Unit V mA A V W * recommended Ptot calculated using FR4 measuring 15X15X0.6mm www.kexin.com.cn 1 SMD Type KVP4424Z Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance *1,2 Input Capacitance *2 Common Source Output Capacitance *2 Reverse Transfer Capacitance*2 Turn-On Delay Time *2,3 Rise Time *2,3 Turn-Off Delay Time *2,3 Fall Time *2,3 gfs Ciss Coss Crss td(on) tr td(off) tf 2% VDD -50V, ID =-0.25A,VGEN=-10V VDS=-25V, VGS=0V, f=1MHz Symbol BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) Testconditons ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 40V, VDS=0V Transistors IC Min -240 -0.7 Typ Max Unit V -1.4 -2.0 100 -10 -100 V nA A A A VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125 VDS=-10V, VGS=-10V VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA VDS=-10V,ID=-0.2A 125 100 18 5 8 8 26 20 -0.75 -1.0 7.1 8.8 9 11 mS 200 25 15 15 15 40 30 pF pF pF ns ns ns ns *1 Measured under pulsed conditions. Width=300 s. Duty cycle *2 Sample test. *3 Switching times measured with 50 source impedance and 5ns rise time on a pulse generator Spice parameter data is available upon request for this device Marking Marking 24P 2 www.kexin.com.cn