KXT5401

S MD Type Transistors Surface Mount PNP Silicon Transistor KXT5401 (CXT5401) SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 4.00-0.1 Features +0.1 0.80-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction- to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R JA Rating -160 -150 -5 -500 1.2 104 150 -65 to +150 Unit V V V mA W /W Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCBO VCEO VEBO ICBO IC=-100 A Testconditons Min -160 -150 -5.0 -50 -50 50 60 50 -0.2 -0.5 -1.0 -1.0 6.0 100 300 V V V V pF MHz 240 Typ Max Unit V V V nA A IC=-1.0mA IE=-10 A VCB =- 120 V, IE = 0 VCB =- 120 V, TA=100 IC = -1.0 mA; VCE = -5.0 V DC current gain hFE IC = -10mA; VCE =- 5.0V IC = -50 mA; VCE = -5.0V Collector to emitter saturation voltage VCE(sat) IC =- 10 mA; IB = -1.0mA IC = -50 mA; IB = -5.0mA Base to emitter saturation voltage Output capacitance Transition frequency VBE(sat) Cob fT IC = -10 mA; IB = -1.0mA IC = -50 mA; IB =- 5.0mA VCB =-10 V, IE = 0,f=1.0MHz IC = -10 mA; VCE =-10V; f = 100 MHz +0.1 -0.1 www.kexin.com.cn 1