KXT5551

S MD Type Transistors Surface Mount NPN Silicon Transistor KXT5551 (CXT5551) SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 Low voltage (max. 150 V). +0.1 0.80-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 High current (max. 500mA). +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction-to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R JA Rating 180 160 6 600 1.2 104 150 -65 to +150 Unit V V V mA W /W Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCBO VCEO VEBO ICBO IC=100 A Testconditons Min 180 160 6.0 50 50 80 80 30 0.15 0.20 1.00 1.00 6.0 100 300 V V V V pF MHz 250 Typ Max Unit V V V nA A IC=1.0mA IE=10 A VCB = 120 V, IE = 0 VCB = 120 V, TA=100 IC = 1.0 mA; VCE = 5.0 V DC current gain hFE IC = 10mA; VCE = 5.0V IC = 50 mA; VCE = 5.0V Collector to emitter saturation voltage VCE(sat) IC = 10 mA; IB = 1.0mA IC = 50 mA; IB = 5.0mA Base to emitter saturation voltage Output capacitance Transition frequency VBE(sat) Cob fT IC = 10 mA; IB = 1.0mA IC = 50 mA; IB = 5.0mA VCB = 10 V, IE = 0,f=1.0MHz IC = 10 mA; VCE =10V; f = 100 MHz +0.1 -0.1 www.kexin.com.cn 1