KZT2222A

SMD S MD Type NPN Switching Transistor KZT2222A Transistors IC SOT-223 Unit: mm +0.2 3.50-0.2 Features High current (max. 600 mA) Low voltage (max.40 V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Ta Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to soldering point 25 Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth(j-a) Rth(j-s) Rating 75 40 6 600 800 200 1 -65 to +150 150 -65 to +150 109 28 K/W K/W Unit V V V mA mA mA W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type KZT2222A Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 IC = 0; VEB = 5 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V DC current gain hFE IC = 10 mA; VCE = 10 V;Ta = -55 IC = 150 mA; VCE = 1 V * IC = 150 mA; VCE = 10 V * IC = 500 mA; VCE = 10 V * collector-emitter saturation voltage VCEsat IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage Collector capacitance Emitter capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time Transition frequency * Pulse test: tp 300 ìs; ä 0.02. VBEsat Cc Ce ton td tr toff ts tf fT IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IE = iE = 0; VCB = 10 V; f = 1 MHz IC = iC = 0; VEB = 500 mV; f = 1 MHz ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA Transistors IC Min Typ Max 10 10 10 Unit nA A nA 35 50 75 35 50 100 40 300 1 0.6 1.2 2 8 25 35 10 25 250 200 60 300 mV V V V pF pF ns ns ns ns ns ns MHz 300 2 www.kexin.com.cn SMD Type TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current 500 VCE =5V DC Current Gain, hFE Transistors IC Collector-Emitter Voltage, VCE(SAT) (V) Collector-Emitter Saturation Voltage vs. Collector Current 0.4 β=10 0.3 125℃ 0.2 25℃ 0.1 -40℃ 1 10 100 Collector Current, IC (mA) 500 400 300 200 100 125℃ 25℃ -40℃ 3 10 30 100 300 1 Collector Current, IC (mA) 0 0.1 0.3 Base-Emitter On Voltage, VBE(ON) (V) Base-Emitter Saturation Voltage vs. Collector Current Base-Emitter Voltage, VBE(SAT) (V) Base-Emitter On Voltage vs. Collector Current 1 VCE =5V -40℃ 25℃ 0.6 125℃ 0.4 0.2 0.1 1 β=10 -40℃ 0.8 0.8 25℃ 125℃ 0.6 0.4 1 500 10 100 Collector Current, I C (mA) 1 10 Collector Current, IC (mA) 25 500 Col lector Current, ICBO (nA) Collector-Cutoff Current vs. Ambient Temperature Emitter Transition and Output Capacitance vs. Reverse Bias Voltage 20 f=1MHz 100 10 1 0.1 25 50 75 100 125 150 Capacitance (pF) VCB=40V 16 12 8 4 0.1 Cob Cte Ambient Temperature, T A(℃) 1 10 Reverse Bias Voltage (V) 100 www.kexin.com.cn 3 SMD Type TYPICAL CHARACTERISTICS Turn On and Turn Off Times vs. Collector Current IC I B1=IB2=10 VCC =25V Time (ns) Time (ns) Transistors IC 400 320 240 160 80 400 320 Switching Times vs. Collector Current IB1=I B2= VCC =25V IC 10 240 160 80 tD 0 10 100 1000 Collector Current, I C (mA) tS tR tOFF t ON tF 0 10 100 1000 Collector Current, IC (mA) Power Dissipation vs . Ambient Temperature 1 Power Dissipation, PC (W) 0.75 0.5 0.25 0 0 25 50 75 100 125 Temperature (℃) 150 4 www.kexin.com.cn