L51

S MD Type High-Speed Double Diode BAS56 Diodes Unit: mm Features Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage:max. 60 V Repetitive peak reverse voltage:max. 60 V Repetitive peak forward current:max. 600 mA. Absolute Maximum Ratings Ta = 25 Parameter repetitive peak reverse voltage Symbol VRRM series connection continuous reverse voltage VR series connection continuous forward current IF single diode loaded; double diode loaded; repetitive peak forward current IFRM single diode loaded double diode loaded square wave; Tj = 25 prior to surge non-repetitive peak forward current IFSM t=1 t = 100 s s 9 3 1.7 250 -65 +150 150 360 500 K/W K/W mW A Test Condition Min Max 60 120 60 120 200 150 600 430 mA mA V Unit V t = 10 ms total power dissipation storage temperature junction temperature thermal resistance from junction to tie-point thermal resistance from junction to ambient Ptot Tstg Tj Rth j-tp Rth j-a Tamb = 25 www.kexin.com.cn 1 S MD Type BAS56 Diodes Electrical Characteristics Ta = 25 Parameter forward voltage reverse current Symbol VF IR Test Condition IF = 200 mA; DC value; VR = 60 V VR =60 V;Tj = 150 series connection reverse current IR VR = 120 V VR =120 V;Tj = 150 diode capacitance reverse recovery time Cd trr f = 1 MHz; VR = 0 when switched from IF = 400 mA to,IR = 400 mA; RL = 100 forward recovery voltage Vfr 100 100 2.5 6 2.0 1.5 nA A pF ns V V Min Max 1.0 100 100 Unit mV nA A ; measured at IR = 40 mA when switched from IF = 400 mA;tr = 30 ns; when switched from IF = 400 mA;tr = 100 ns; Marking Marking L51 2 www.kexin.com.cn