MBD330DWT1

S MD Type Dual Schottky Barrier Diodes MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 +0.1 -0.1 Diodes Unit: mm 0.65 0.525 Features Very Low Capacitance Low Reverse Leakage +0.15 2.3-0.15 0.36 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r M B D110DW T1 R e ve rs e V o lta g e M B D330DW T1 M B D770DW T1 F o rw a rd P o w e r D is s ip a tio n J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e TA = 25 PF TJ T stg VR S ym b o l V a lu e 7 30 70 120 -5 5 to + 1 2 5 -5 5 to + 1 5 0 mA V dc U n it +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 Extremely Low Minority Carrier Lifetime www.kexin.com.cn 1 S MD Type MBD110DWT1 MBD330DWT1;MBD770DWT1 Electrical Characteristics Ta = 25 Parameter MBD110DWT1 Reverse Breakdown Voltage MBD330DWT1 MBD770DWT1 Diode Capacitance Total Capacitance MBD110DWT1 MBD330DWT1 MBD770DWT1 MBD110DWT1 Reverse Leakage MBD330DWT1 MBD770DWT1 Noise Figure MBD110DWT1 MBD110DWT1 MBD330DWT1 Forward Voltage MBD770DWT1 VF NF IR CT CT VR = 0, f = 1.0 MHz VR = 15 Volts, f = 1.0 MHz VR = 20 Volts, f = 1.0 MHz VR = 3.0 V VR = 25 V VR = 35 V f = 1.0 GHz IF = 10 mA IF = 1.0 mAdc IF = 10 mA IF = 1.0 mAdc IF = 10 mA VBR(R) IR = 10 A Symbol Conditions Min 7.0 30 70 0.88 0.9 0.5 0.02 13 9 6 0.5 0.38 0.52 0.47 0.7 Typ 10 Diodes Max Unit Volts 1.0 1.5 1.0 0.25 200 200 pF pF A nAdc nAdc dB 0.6 0.45 0.6 0.5 1.0 Vdc Marking Type Marking MBD110DWT1 MMBD330DWT1 MBD770DWT1 M4 T4 H5 2 www.kexin.com.cn