MMBD101

S MD Type Schottky Barrier Diodes MMBD101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 Features Low Noise Figure-6.0dB Typ@1.0GHz Very Low Capacitance-Less Than 1.0pF@zero Volts High Forward Conductance-0.5volts(typ)@IF=10mA +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R everse voltage F orward P ower D issipation @ T A = 25 D erate above 25 Junction tem perature S torage tem perature range Tj T stg pF 280 2.2 150 -55 to +150 mW mW/ S ym bol VR V alue 7.0 U nit V Electrical Characteristics Ta = 25 Parameter Reverse Breakdown Voltage Diode Capacitance Forward Voltage Reverse Leakage Symbol V (BR)R CT VF IR Conditions IR = 10 A Min 7.0 Typ 10 0.88 0.5 0.02 1.0 0.6 0.25 Max Unit V pF V A V R = 0,f =1.0MHz,Note1 IF = 10 mA V R = 3.0 V Marking Marking 4M +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1