S MD Type
High Conductance Ultra Fast Diode MMBD1201;MMBD1203 MMBD1204;MMBD1205
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Diodes
Unit: mm
+0.1 2.4-0.1
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r W o rk in g In v e rs e V o lta g e A v e ra g e R e c tifie d C u rre n t D C F o rw a rd C u rre n t R e c u rre n t P e a k F o rw a rd C u rre n t P e a k F o rw a rd S u rg e C u rre n t P u ls e w id th = 1 .0 s e c o n d P u ls e w id th = 1 .0 m ic ro s e c o n d S to ra g e T e m p e ra tu re R a n g e O p e ra tin g J u n c tio n T e m p e ra tu re T o ta l D e v ic e D is s ip a tio n D e ra te a b o v e 2 5 T h e rm a l R e s is ta n c e , J u n c tio n to A m b ie n t R
JA
S ym bol W
IV
V a lu e 50 200 600 700
U n it V mA mA mA
IO IF if
i f( s u r g e )
1 .0 2 .0
A A
T s tg TJ PD
-5 5 to + 1 5 0 150 350 2 .8 357 mW mW/ /W
+0.1 0.38-0.1
0-0.1
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1
S MD Type
MMBD1201;MMBD1203 MMBD1204;MMBD1205
Diodes
Electrical Characteristics Ta = 25
Parameter Breakdown voltage Symbol BV Conditions IR = 100 IF = 20 V Reverse current IR IF = 50 V IF = 50 V, T A = 150 IF = 1.0 mA IF = 10 mA Forward voltage VF IF = 100 mA IF = 200 mA IF = 300 mA Diode capacitance Reverse recovery time CD T RR V R = 0, f = 1.0 MHz IF = IR = 10 mA,IRR = 1.0 mA, R L = 100 550 660 820 0.87 A Min 100 25 50 5 600 740 920 1.0 1.1 2.0 4.0 Max Unit V nA nA A mV mV mV V V pF ns
Marking
Type Marking MMBD1201 24 MMBD1203 26 MMBD1204 27 MMBD1205 28
2
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