MMBD1701A

S MD Type High Conductance Low Leakage Diode MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Working lnverse voltage Average rectified current DC forward current recurrent peak forward current Peak forward surge current pulse width = 1.0 second Storage temperature range Operating junction temperature Total device dissipation Derate above 25 Thermal resistance, Junction to ambient MMBD1701/A /1703/A-1705/A* * Device mounted on glass epoxy 1.6" 1.6" 0.06", mounting pad for collector lead min. 0.93in2. R JA Symbol W IV IO IF if if T stg TJ PD Value 20 50 150 150 250 -55 to + 150 150 350 2.8 357 Unit V mA mA mA mA mW mW/ /W +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Reverse current Symbol BV IR Conditions I R = 5.0 I F = 20 V I F = 10 I F = 100 Forward voltage VF A A 420 520 640 760 810 0.89 A Min 30 50 500 610 740 880 950 1.1 1.0 Max Unit V nA mV mV mV mV mV V pF I F = 1.0 mA I F = 10 mA I F = 20 mA I F = 50 mA Diode capacitance Reverse Recovery time MMBD1701-1705 MMBD1701A-1705A CD V R = 0, f = 1.0 MHz T RR I F = I R = 10 mA,I RR = 1.0 mA, R L = 100 I F = I R = 10 mA,I RR = 1.0 mA, R L = 101 700 1.0 ps ns Marking Type Marking MMBD1701/A MMBD1703/A MMBD1704/A MMBD1705/A 85/85A 87/87A 88/88A 89/89A 2 www.kexin.com.cn