MMBD5819

S MD Type Schottky Diodes MMBD5819 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Features Power Dissipation: PD = 300mW Collector Current: IF = 1A Collector-Base Voltage: VR = 40V +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector PIN Array Absolute Maximum Ratings Ta = 25 Parameter Collector Current Collector-Base Voltage Power Dissipation Operating and Storage Junction Temperature Range Symbol IF VR PD Tj,TSTG Rating 1 40 300 -55 to +150 Unit A V mW Electrical Characteristics Ta = 25 Parameter Reverse Breakdown Voltage Forward Voltage (pulse test) Symbol V(BR)R VF IR = 1mA IF = 1A IF = 3A Reverse Voltage Leakage Current Diode Capacitance IR CD VR = 20V VR = 40V VR = 0, f = 1.0MHz Testconditons Min 40 0.6 0.9 1 1 120 A pF Typ Max Unit V V Marking Marking SL +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1