MMBT2222AW

SMD S MD Type General Purpose Transistor MMBT2222AW Transistors IC Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC PD RèJA Tj Tstg Rating 40 75 6.0 600 150 833 150 -55 to +150 Unit V V V mA mW /W www.kexin.com.cn 1 SMD Type MMBT2222AW Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Base cutoff current Collector cutoff current DC current gain * Collector-emitter saturation voltage * Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX HFE VCE(sat) Testconditons IC = 1.0 mA, IB = 0 IC = 10 ìA, IE = 0 IE = 10 ìA, IC = 0 VCE = 60 V, VEB = 3.0 V VCE = 60 V, VEB = 3.0 V IC = 150 mA, VCE = 10 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage * Current-gain-bandwidth product Output capacitance Input capacitance Input impedance Voltage feedback ratio Small-sgnal current gain Output admittance Noise figure Delay time Rise time Storage time Fall time * Pulse test: pulse width 300 ìs, duty cycle VBE(sat) fT Cobo Cibo hie hre hfe hoe NF td tr ts tf 2.0%. IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz VCE = 10 V, IC = 10 mA, f = 1.0 kHz VCE = 10 V, IC = 10 mA, f = 1.0 kHz VCE = 10 V, IC = 10 mA, f = 1.0 kHz VCE = 10 V, IC = 10 mA, f = 1.0 kHz VCE = 10 V, IC = 100 ìA, RS = 1.0 kÙ, f = 1.0 kHz VCC = 3.0 V, VBE = -0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA Transistors IC Min 40 75 6 Typ Max Unit V V V 20 10 100 300 0.3 1.0 0.6 1.2 2.0 300 8.0 30 0.25 1.25 4.0 75 25 375 nA nA V MHz pF pF kÙ X10-4 200 ìmhos 4.0 10 25 225 60 dB ns ns ns ns Marking Marking P1 2 www.kexin.com.cn