MMBT2907AW

SMD S MD Type General Purpose Transistor MMBT2907AW Transistors IC Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * FR-5 = 1.0X 0.75 X0.062 in. Symbol VCEO VCBO VEBO IC PD RèJA Tj Tstg Rating -60 -60 -5 -600 150 833 150 -55 to +150 Unit V V V mA mW /W www.kexin.com.cn 1 SMD Type MMBT2907AW Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Base cutoff current Collector cutoff current Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Testconditons IC = -10 mA, IB = 0 IC = -10 mA, IE = 0 IE = -10 ìA, IC = 0 VCE = -30 V, VEB(off) = -0.5 V VCE = -30 V, VEB(off) = -0.5 V IC = -0.1 mA, VCE = -10 V IC = -1.0 mA, VCE = -10 V IC = -10 mA, VCE = -10 V IC = -150 mA, VCE = -10 V IC = -500 mA, VCE = -10 V IC = -150 mA, IB = -15 mA IC = -500 mA, IB = -50 mA Base-emitter saturation voltage * Current-gain-bandwidth product Output capacitance Input capacitance Turn?on time Delay time Rise time Storage time Fall time Turn?off time * Pulse test: pulse width 300 ìs, duty cycle VBE(sat) fT Cobo Cibo ton td tr ts tf toff 2.0%. VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = 15 mA VCC = -30 V, IC = -150 mA, IB1 = -15 mA IC = -150 mA, IB = -15 mA IC = -500 mA, IB = -50 mA IC = -50 mA, VCE = 20 V, f = 100 MHz VCB = -10 V, IE = 0, f = 1.0 MHz VEB = -2.0 V, IC = 0, f = 1.0 MHz Transistors IC Min -60 -60 -5 Typ Max Unit V V V -50 -50 75 100 100 100 50 -0.4 -1.6 -1.3 -2.6 200 8.0 30 45 10 40 80 30 100 nA nA DC current gain * HFE Collector-emitter saturation voltage * VCE(sat) V MHz pF pF ns ns ns ns ns ns Marking Marking 20 2 www.kexin.com.cn