MMBT5088

SMD S MD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 NPN general purpose amplifier +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total device dissipation Derate above 25 Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol VCE0 VCBO VEBO IC Tj Tstg PD RèJC RèJA 625 5.0 83.3 200 357 MMBT5088 30 35 4.5 100 150 -55 to +150 350 2.8 mW mW/ /W /W MMBT5089 25 30 Unit V V V mA +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type MMBT5088,MMBT5089 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage MMBT5088 MMBT5089 MMBT5088 MMBT5089 Collector-cutoff current MMBT5088 MMBT5089 Emitter-base cut-off current MMBT5088 MMBT5089 Collector-emitter saturation voltage Base-emitter saturation voltage Current gain - bandwidth product Collector-base capacitance Emitter-base capacitance Small-signal current gain MMBT5088 MMBT5089 Noise figure MMBT5088 MMBT5089 NF IC = 100 ìA, VCE = 5.0 V, Rs = 10KÙ, f = 10 Hz to 15.7kHz VCE(sat) VBE(on) fT Ccb Ceb hfe IC =10 mA, IB = 1.0 mA IC =10 mA, VCE = 5.0 V IC = 500 ìA, VCE = 5.0mA,f = 20 MHz VCB = 5.0 V,IE = 0, f = 100 KHz VBE = 0.5 V,IC = 0, f = 100 KHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 KHz IEBO ICBO VCB = 20 V, IE = 0 VCB = 15 V, IE = 0 VEB = 3.0 V, IC = 0 VEB = 4.5 V, IC = 0 DC current gain hFE IC = 100 ìA, VCE = 5.0 V V(BR)CBO IC = 100 ìA, IE = 0 Transistors IC unless otherwise noted Symbol V(BR)CEO Testconditons IC = 1.0 mA, IB = 0 Min 30 25 35 30 50 50 50 100 300 400 900 1200 0.5 0.8 50 4.0 10 350 450 1400 1800 3.0 2.0 dB dB V V MHz pF pF nA nA nA nA V Typ Max Unit V hFE Classification TYPE Marking MMBT5088 1Q MMBT5089 1R 2 www.kexin.com.cn